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P1260ETFS

NIKO-SEM
Part Number P1260ETFS
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published Feb 9, 2017
Detailed Description NIKO-SEM N-Channel Enhancement Mode P1260ETF:TO-220F P1260ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-F...
Datasheet PDF File P1260ETFS PDF File

P1260ETFS
P1260ETFS

Overview
NIKO-SEM N-Channel Enhancement Mode P1260ETF:TO-220F P1260ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 670mΩ ID 12A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 1 23 1.
GATE 2.
DRAIN 3.
SOURCE LIMITS 600 ±30 12 7.
6 48 7.
3 264 48 19 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM 2.
6 62.
5 UNITS °C / W °C / W E...


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