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SI2307

PUOLOP
Part Number SI2307
Manufacturer PUOLOP
Description -30V P-Channel Enhancement Mode MOSFET
Published Mar 12, 2017
Detailed Description SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), Vgs@-4.5V, Ids@-...
Datasheet PDF File SI2307 PDF File

SI2307
SI2307

Overview
SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.
1A < 64.
5mΩ RDS(ON), Vgs@-4.
5V, Ids@-3.
0A < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
65 2.
95 1.
50 1.
70 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
1.
90 1.
00 0.
10 0.
40 0.
85 Max.
REF.
1.
30 0.
20 1.
15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ± 20 Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25oC TA = 75oC ID IDM PD -5.
3 -20 1.
4 1 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 125 Unit V A W oC oC/W - 1 - 2012-7-8 SI2307 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) ...


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