600V N-Channel MOSFET
Description
FQU4N60 600V N-Channel MOSFET
FQU4N60
600V N-Channel MOSFET
Features
2.6A, 600V @TJ = 25°C Typ. RDS(on) = 1.0Ω Low gate charge (typical 12.8nC) Low effective output capacitance (typ ical 32pF) 100% avalanche tested Improved dv/dt capability
November 2002
QFET TM
Description
These N-Channel enhancement mode power field effect transistors are pro...
Fairchild Semiconductor
FQU4N60 PDF File
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