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SW1N60D

SEMIPOWER
Part Number SW1N60D
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ ...
Datasheet PDF File SW1N60D PDF File

SW1N60D
SW1N60D

Overview
SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.
5Ω)@VGS=10V ■ Gate Charge (Typical 6.
8 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 600V ID : 1A RDS(ON) :8.
5Ω 2 1 3 Order Codes Item 1 2 Sales Type SW I 1N60 SW C 1N60 Marking SW1N60D SW1N60D Package TO-251 TO-92 Packaging TUBE TAPE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain c...


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