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EMB12N06G

Part Number	EMB12N06G
Manufacturer	Excelliance MOS
Description	MOSFET
Published	Apr 26, 2017
Detailed Description	N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) ...
Datasheet	EMB12N06G PDF File

Overview

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.
) 12mΩ ID 12A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.
1mH, ID=12A, RG=25Ω L = 0.
05mH Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL VGS ID IDM IAS EAS EAR PD Tj, Tstg TYPICA...

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