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2N5089 Data Sheet

NPN SILICON EPITAXIAL TRANSISTORS

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2N5089
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.5 12 150 -55 to +150 357 125 Min 30 25 2N5089 UNITS 30 V 25 V V mA mW mW/deg C W mW/deg C deg C deg C deg C/W deg C/W Max UNITS -V -V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089 .


CDIL

2N5089

2N5089

Download 2N5089 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 Collector -Base Voltage VCBO 35 Collector -Emitter Voltage VCE0 30 Emitter -Base Voltage VEBO Collector Current- Continuous IC Power Dissipation@ Ta=25 deg C PD Derate Above 25 deg C Power Dissipation@ Tc=25 deg C PD Derate Above 25 deg C Junction Temperature Tj Storage Temperature Tstg THERMAL RESISTANCE Junction to Ambient Rth(j-a) (1) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL Collector -Emitter Voltage VCEO* IC=1mA, IB=0 2N5088 2N5089 4.5 50 625 5.0 1.5 12 150 -55 to +150 357 125 Min 30 25 2N5089 UNITS 30 V 25 V V mA mW mW/deg C W mW/deg C deg C deg C deg C/W deg C/W Max UNITS -V -V Collector -Base Voltage VCBO IC=100uA,IE=0 2N5088 35 - V 2N5089 .


2N5088 2N5089 2N5209


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