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MRF581

Part Number	MRF581
Manufacturer	ASI
Description	NPN SILICON RF TRANSISTOR
Published	May 8, 2017
Detailed Description	MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications...
Datasheet	MRF581 PDF File

Overview

MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.
0 GHz.
PACKAGE STYLE Dim.
Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.
5 V PDISS 2.
5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 1.
0 mA BVCEO IC = 1.
0 mA BVEBO IE = 100 µA IEBO VEB = 2.
0 V ICBO VCB = 15 V hFE VCE = 5.
0 V IC = 50 mA MINIMUM TYPICAL MAXIMUM 36 18 2.
5 100 100 50 200 UNITS V V V µA µA --- Ccb VCB = 10 V f = 1.
0 MHz 1.
4 2.
0 pF GP VCC = 10 V IC = 50 f = 0.
5 GHz 13 15.
5 dB A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to cha...

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