DatasheetsPDF.com

2N5193

Part Number	2N5193
Manufacturer	Multicomp
Description	Bipolar Transistor
Published	May 16, 2017
Detailed Description	Bipolar Transistor NPN Collector 3 2 Base 1 Emitter Description: Silicon TO-126, PNP Power Transistor for use in power...
Datasheet	2N5193 PDF File

Overview

Bipolar Transistor NPN Collector 3 2 Base 1 Emitter Description: Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 40 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C www.
element14.
com www.
farnell.
com www.
newark.
com Page <1> 23/04/13 V1.
0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Pa...

Similar Datasheet

2N5100 (2N5xxx) High Voltage Silicon Low and Medium Power Transistors - Semiconductor Technology
2N5101 (2N5xxx) High Voltage Silicon Low and Medium Power Transistors - Semiconductor Technology
2N5102 RF Power Devices - RCA Solid State
2N5103 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5104 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5105 (2N5xxx) Low Power Field Effect Transistors - Solitron Devices
2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR - Advanced Semiconductor
2N5108 HIGH FREQUENCY TRANSISTOR - Motorola
2N5108 Silicon NPN Power Transistor - INCHANGE
2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)