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2N4913

Part Number	2N4913
Manufacturer	TT
Description	SILICON EPITAXIAL NPN TRANSISTOR
Published	Jun 16, 2017
Detailed Description	SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed Fo...
Datasheet	2N4913 PDF File

Overview

SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage.
• Hermetic TO3 Metal Package.
• Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 5A IB Base Current 1.
0A PD Total Power Dissipation at TC = 25°C 87.
5W Derate Above 25°C 0.
5W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case M...

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