N-Channel Silicon Junction Field-Effect Transistor
Description
8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect Transistor
∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -25V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2.3 mW/oC
Storage Temperature ...
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