DatasheetsPDF.com

2SB1189

Part Number	2SB1189
Manufacturer	JCET
Description	PNP Transistor
Published	Aug 5, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) ...
Datasheet	2SB1189 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1.
BASE 2.
COLLECTOR 1 2 3.
EMITTER 3 Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -0.
7 0.
5 150 -55~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown vol...

Similar Datasheet

2SB1100 Silicon PNP Power Transistors - Inchange Semiconductor
2SB1101 PNP Transistor - Hitachi Semiconductor
2SB1101 SILICON POWER TRANSISTOR - SavantIC
2SB1101 PNP Transistor - INCHANGE
2SB1102 PNP Transistor - Hitachi Semiconductor
2SB1102 SILICON POWER TRANSISTOR - SavantIC
2SB1102 PNP Transistor - INCHANGE
2SB1103 PNP Transistor - Hitachi Semiconductor
2SB1103 PNP Transistor - INCHANGE
2SB1103 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)