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2SB1260

Part Number	2SB1260
Manufacturer	GME
Description	Power Transistor
Published	Aug 5, 2017
Detailed Description	Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. ...
Datasheet	2SB1260 PDF File

Overview

Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current.
BVCEO=-80V,IC=-1A z Good hFEVLinearity.
z Low VCE(sat).
z Complements the 2SD1898.
Pb Lead-free APPLICATIONS z Epitaxial planar type PNP silicon transistor Production specification 2SB1260 SOT-89 ORDERING INFORMATION Type No.
Marking 2SB1260 ZL Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC Pc Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation -80 -80 -5 -1 -2 0.
5 2 *1 Tj Junction Temperature 150 Tstg Storage Temperature *1: When mountef on a 40*40*0.
7mm ceramic board.
-55 to +150 Unit V V V A W ℃ ℃ E045 Rev.
A www.
gmicroelec.
com 1 Production specification Power Transistor(-80V,-1A) 2SB1260 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown vol...

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