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2SB1274

Part Number	2SB1274
Manufacturer	LGE
Description	PNP Transistor
Published	Aug 28, 2017
Detailed Description	1. BASE 2. COLLECTOR Features 3 2 1 3. EMITTER Wide ASO (Adoption of MBIT process). Low saturation voltage. H...
Datasheet	2SB1274 PDF File

Overview

1.
BASE 2.
COLLECTOR Features 3 2 1 3.
EMITTER Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
2SB1274(PNP) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -60 -6 -3 2 150 -55-150 Units V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC =-1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-5mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 Emitter cut-off current IEBO VEB=-4V, IC=0 DC current gain hFE(1) hFE(2) VCE=-5V, IC=-500mA...

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