POWER FIELD EFFECT TRANSISTOR
Description
GPT13N50C / GPT13N50CD
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
Avalanche Energy Specified
without degrading performance over time. In addition, this
Source-to-Drain Diode Recovery Time Compara...
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