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HY1608B

HOOYI
Part Number HY1608B
Manufacturer HOOYI
Description N-Channel MOSFET
Published Jan 26, 2018
Detailed Description HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Dr...
Datasheet PDF File HY1608B PDF File

HY1608B
HY1608B

Overview
HY1608P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 -55 to 175 65 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=100°C TC=25°C TC=100°C 260** 65 46 126 63 1.
19 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH 284*** Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W mJ Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltag...


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