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BLV935

NXP
Part Number BLV935
Manufacturer NXP
Description UHF power transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductor...
Datasheet PDF File BLV935 PDF File

BLV935
BLV935

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits.
APPLICATIONS • Base stations in the 820 to 980 MHz range.
1 3 2 4 BLV935 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.
The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap...


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