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S6307

SiC Schottky Barrier Diode

Description

S6307 SiC Schottky Barrier Diode VR 1200V IF 30A*1 QC 82nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Reverse voltage (repetitive peak) VR...

ROHM

S6307 PDF File

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