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BF1005S

Infineon Technologies AG
Part Number BF1005S
Manufacturer Infineon Technologies AG
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V ...
Datasheet PDF File BF1005S PDF File

BF1005S
BF1005S

Overview
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S.
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AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - Marking NZs NZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel...


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