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BF1204

NXP
Part Number BF1204
Manufacturer NXP
Description Dual N-channel dual gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specificat...
Datasheet PDF File BF1204 PDF File

BF1204
BF1204

Overview
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.
DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect against ex...


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