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BF987

Siemens Semiconductor Group
Part Number BF987
Manufacturer Siemens Semiconductor Group
Description SILICON N CHANNEL MOSFET TRIODE
Published Mar 23, 2005
Detailed Description Silicon N Channel MOSFET Triode q q BF 987 For high-frequency stages up to 300 MHz, preferably in FM applications High...
Datasheet PDF File BF987 PDF File

BF987
BF987

Overview
Silicon N Channel MOSFET Triode q q BF 987 For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability Type BF 987 Marking – Ordering Code Q62702-F35 Pin Configuration 1 2 3 D S G Package1) TO-92 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 45 ˚C Storage temperature range Channel temperature Thermal Resistance Junction - ambient Rth JA ≤ Symbol VDS ID ± Values 20 30 10 300 150 Unit V mA mW IGSM Ptot Tstg Tch – 55 … + 150 ˚C 350 K/W 1) For detailed information see chapter Package Outlines.
BF 987 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 Gate-source leakage current ± VGS = 5 V, VDS = 0 Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC Characteristic...


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