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BFQ75

Siemens Semiconductor Group
Part Number BFQ75
Manufacturer Siemens Semiconductor Group
Description PNP Silicon RF Transistor
Published Mar 23, 2005
Detailed Description PNP Silicon RF Transistor q q BFQ 75 For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. Co...
Datasheet PDF File BFQ75 PDF File

BFQ75
BFQ75


Overview
PNP Silicon RF Transistor q q BFQ 75 For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.
Complementary type: BFQ 72 (NPN).
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 75 Marking 75 Ordering Code (tape and reel) Q62702-F803 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS ≤ 112 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS ≤ ≤ Symbol VCE0 VCES VCB0 VEB0 IC Ptot Tj TA Tstg Values 12 1 15 2 50 350 175 – 65 … + 175 – 65 … + 175 Unit V mA mW ˚C 260 180 K/W For detailed dimensions see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2) BFQ 75 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 5 V AC Characteristics Transition frequency IC = 30 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.
5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 50 Ω IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω Power gain IC = 30 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt fT Ccb Cibo Cobs F – – Gpe – 2.
2 3 14 – – – – – – – 5 0.
75 1.
6 1.
1 – – – – dB GHz pF V(BR)CE0 ICB0 IEB0 hFE 12 – – 20 – – – 50 – 50 10 – V nA µA Values typ.
max.
Unit – BFQ 75 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumi...


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