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2N6096

ETC
Part Number 2N6096
Manufacturer ETC
Description PNP SILICON RF POWER TRANSISTORS
Published Jul 12, 2018
Detailed Description 2N6094 thru 2N6097 (SILICON) The RF Lin.e PNP SILICON RF POWER TRANSISTORS ... designed for 12.5 Volt VHF large-signal ...
Datasheet PDF File 2N6096 PDF File

2N6096
2N6096

Overview
2N6094 thru 2N6097 (SILICON) The RF Lin.
e PNP SILICON RF POWER TRANSISTORS .
.
.
designed for 12.
5 Volt VHF large-signal amplifier applications required in military and industrial equipment operating to 250 MHz.
• Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness • Low Lead Inductance Stripline Packaging for Easier Design and IncreaSed Broadband Capabilities • Flange Package for Easy Mounting and BetterThermal Conductivity to Heat Sink • Exceptional Power Output Stability versus Temperature 4_0.
15.
30.
40WATTS-175 MHz PNPSILICON RF POWER TRANSISTORS "MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @Te=250 e Derate above 25°C Storage Temperature Range .
Svmbol 2N6094 VeEO VeBO VEBO Ie 1.
0 2N6095 2N6096 18 36 4.
0 2.
5 4.
0 .
.
.
2N6097 6.
0 Unit Vdc Vdc Vdc Adc PO!l) T stg 8.
0 45.
7 20 40 114 228 -65'0...


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