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2N5473

Part Number	2N5473
Manufacturer	ETC
Description	P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Published	Jul 14, 2018
Detailed Description	2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transisto...
Datasheet	2N5473 PDF File

Overview

2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
• High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types • High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc • Low Reverse Transfer Capacitance Crss = 1.
0pF (Max)@VDs=-15Vdc • Tight IDSS Range for Easier Circuit Design • Drain and Source Interchangeable P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS 'MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C Derate above 2SoC Operating Channel Temperature Rang...

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