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2SD525

NPN Transistor

Description

SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES High Breakdown Voltage : VCEO=100V Low Collector Saturation Voltage : VCE ( sat )=2.0V(Max. Complementary to 2SB595. Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base V...

Toshiba

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