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2SC2652

Part Number	2SC2652
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL PLANAR TYPE ) 2 - 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (50V SUPPLY VOLTAGE USE) FEATURE...
Datasheet	2SC2652 PDF File

Overview

SILICON NPN EPITAXIAL PLANAR TYPE ) 2 - 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (50V SUPPLY VOLTAGE USE) FEATURE S_ .
Specified 50V, 28MHz Characteristics : Output Power : P o=200WpEP : Minimum Gain : Gpe=13dB : Efficiency : 7 C =35% (Min.
) : Intermodulation Distortion : IMD=-30dB(Max.
.
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=50V, Po=150WPEp, f=28MHz Unit in mm MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL 'CBO VCES VCEO VEBO ic RATING 85 85 ...

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