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2SB677

Toshiba
Part Number 2SB677
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AP...
Datasheet PDF File 2SB677 PDF File

2SB677
2SB677

Overview
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES: • High DC Current Gain : h FE =2000 (Min.
) (vCE=-2V, I C=-1A) Low Saturation Voltage VCE (satr-1 - 57 Max ( -> (i c = - 2A) INDUSTRIAL APPLICATIONS Unit in mm 10.
3MAX,, 03.
6±O.
2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO RATING I60 -40 -5 UNIT V 2.
54 2.
54 lO 8 dJ 13 3 >< 4 Collector Current Collector Power Dissipation ( tc=25 ° C ) Junction Temperature Tj -3 25 150 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER Stor...


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