NPN Transistor
Description
2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
High Collector·Emitter Breakdown Voltage -
BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657
High Emitter-Base Breakdown Voltage -
BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde
NPN SILICON ANNULAR ...
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