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2N697

Part Number	2N697
Manufacturer	Motorola
Description	NPN Transistor
Published	Nov 14, 2018
Detailed Description	2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general pu...
Datasheet	2N697 PDF File

Overview

2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCB 60 Vdc Emitter-Base Voltage VEB 5.
0 Vdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ' Tstg 0.
6 13.
3 2.
0 13.
3 -65 to +200 watt mWrC Watts mWrC °c ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.
) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage" (Ic = 100 mAdc,...

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