DatasheetsPDF.com

HM2305

P-Channel Enhancement Mode Power MOSFET

Description

+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-...

H&M Semiconductor

Download HM2305 Datasheet

Similar Datasheet

HM2300 N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300B N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300C N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300D N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300DR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2300PR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301 Digital-output humidity and temperature sensor - Hanwei
HM2301A P-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2301B P-Channel Trench Power MOSFET - H&M Semiconductor
HM2301BJR P-Channel MOSFET - H&M Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)