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HM2319

H&M Semiconductor
Part Number HM2319
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2319 P-Channel Enhancement Mode Power MOSFET Description The HM2319 uses advanced trench technology to provide excel...
Datasheet PDF File HM2319 PDF File

HM2319
HM2319

Overview
HM2319 P-Channel Enhancement Mode Power MOSFET Description The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.
General Features ● VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.
5V RDS(ON) < 85mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2319 Marking and pin assignment Application ● Battery applications ● Load switch SOT-23-3L top view Package Marking and Ordering Information Device Marking Device Device Package 2319 HM2319 SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 u...


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