N & P-Channel Enhancement Mode Power MOSFET
Description
HM4606C
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM4606C uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications.
General Features
● N-Channel VDS = 20V,ID =5.0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.5V
● P-Channel VDS = -20V,ID...
Similar Datasheet
