DatasheetsPDF.com

HM2302DR

Part Number	HM2302DR
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	.3*8 1&KDQQHO9'6026)(7 GENERAL DESCRIPTION The HM2302DR is the N-Channel logic enhancement mode power fiel...
Datasheet	HM2302DR PDF File

Overview

.
3*8 1&KDQQHO9'6026)(7 GENERAL DESCRIPTION The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 270 mΩ @VGS=4.
5V ● RDS(ON)= 330 mΩ @VGS=2.
5V ● RDS(ON)= 450 mΩ @VGS=1.
8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Pa...

Similar Datasheet

HM2302 N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302 Digital temperature and humidity sensor - ETC
HM2302A N-channel MOSFET - H&M Semiconductor
HM2302B N-Channel Trench Power MOSFET - H&M Semiconductor
HM2302BJR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302BKR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302BSR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302D N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302DR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM2302E N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)