DatasheetsPDF.com

HM2302BKR

H&M Semiconductor
Part Number HM2302BKR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description .3(18 N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2302BKR is the N-Channel logic enhancement mode power fi...
Datasheet PDF File HM2302BKR PDF File

HM2302BKR
HM2302BKR

Overview
.
3(18 N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 270 mΩ @VGS=4.
5V ● RDS(ON)= 330 mΩ @VGS=2.
5V ● RDS(ON)= 450 mΩ @VGS=1.
8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding DSC N-Channel 3D 2302 G1 2S Marking and pin Assignmen...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)