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HM3400B

N-Channel Enhancement Mode Power MOSFET

Description

+03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RD...

H&M Semiconductor

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