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HM3406B

N-Channel Enhancement Mode Power MOSFET

Description

HM3406B N-Channel Enhancement Mode Power MOSFET Description The HM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V ● High Power and current handing capability ● L...

H&M Semiconductor

HM3406B PDF File

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