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HM3416E

H&M Semiconductor
Part Number HM3416E
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description 20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS...
Datasheet PDF File HM3416E PDF File

HM3416E
HM3416E

Overview
20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.
2 A RDS(ON), Vgs @ 1.
8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.
5V, Ids @ 3.
8 A = 28mΩ RDS(ON), Vgs @ 4.
5V, Ids @ 4.
2 A = 24mΩ ESD Protected：2000V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-** SOT-23(PACKAGE) GS REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 1.
00 0.
10 0.
40 0.
85 REF.
1.
30 0.
20 1.
15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC Parameter Symbol Limit Unit...


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