N-Channel Enhancement Mode Power MOSFET
Description
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N-Channel 40V(D-S) MOSFET
GENERAL DESCRIPTION
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
● RDS(ON) ≦40mΩ@VGS=10V ● RDS(ON) ≦65...
H&M Semiconductor
HM2318 PDF File
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