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HM3414B

H&M Semiconductor
Part Number HM3414B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3414B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414B uses advanced trench technology to provide exce...
Datasheet PDF File HM3414B PDF File

HM3414B
HM3414B

Overview
HM3414B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 20V,ID = 2.
9A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 3414 G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3414 HM3414B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (No...


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