RF Power GaN HEMT
Description
CG2H40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities mak...
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