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SE3080G

Sino-IC
Part Number SE3080G
Manufacturer Sino-IC
Description N-Channel MOSFET
Published Feb 22, 2019
Detailed Description SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology an...
Datasheet PDF File SE3080G PDF File

SE3080G
SE3080G

Overview
SE3080G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 4.
5mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5*6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Symbol VDS VGS ID PD EAS TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 30 ±20 80 170 83 306 -55 to 175 Units V V A W mJ ℃ Typ Max Units - 3 ℃/W ShangHai Sino-IC Microelectronic Co.
, Ltd.
1.
SE3080G Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions OFF CHARACTERISTICS (Note 2) BVDSS IDSS IGSS VGS(t...


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