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3205TR

GFD

N-Channel MOSFETS


Description
N-Channel MOSFETS DESCRIPTION The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook com...



GFD

3205TR

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