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1SS133

JGD
Part Number 1SS133
Manufacturer JGD
Description Silicon Epitaxial Planar Switching Diode
Published Mar 31, 2019
Detailed Description Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar...
Datasheet PDF File 1SS133 PDF File

1SS133
1SS133

Overview
Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.
5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-35 INCHES MM DIM MIN MAX MIN MAX A 1.
083 --- 27.
50 --- B --- 0.
154 --- 3.
90 C --- 0.
020 --- 0.
50 D --- 0.
075 --- 1.
90 Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg Value 90 80 130 400 600 300 175 - 65 to + 175 Unit V V mA mA mA mW ℃ ℃ Symbol VF IR CT trr Max.
1.
2 0.
5 2 4 Unit V µA pF ns Version: 6.
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