DatasheetsPDF.com

BAS21GW

nexperia
Part Number BAS21GW
Manufacturer nexperia
Description High-voltage switching diode
Published Jun 30, 2019
Detailed Description BAS21GW High-voltage switching diode 15 June 2017 Product data sheet 1. General description High-voltage switching dio...
Datasheet PDF File BAS21GW PDF File

BAS21GW
BAS21GW

Overview
BAS21GW High-voltage switching diode 15 June 2017 Product data sheet 1.
General description High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Small SMD plastic package • AEC-Q101 qualified 3.
Applications • High-speed switching • General-purpose switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter IF forward current VR reverse voltage VF forward voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.
02 ; Tj = 25 °C VR = 200 V; pulsed; Tj = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 225 mA - - 200 V - - 1.
25 V - - 100 nA - - 50 ns Nexperia BAS21GW High-voltage switching diode 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 K Cathode 2 A Anode Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6.
Ordering information Table 3.
Ordering information Type number Package Name BAS21GW SOD123 Description Plastic surface-mounted package; 2 leads Version SOD123 7.
Marking Table 4.
Marking codes Type number BAS21GW Marking code GC BAS21GW Product data sheet All information provided in this document is subject to legal disclaimers.
15 June 2017 © Nexperia B.
V.
2017.
All rights reserved 2 / 11 Nexperia BAS21GW High-voltage switching diode 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VRRM repetitive peak reverse Tj = 25 °C voltage VR reverse voltage IF forward current IFSM non-repetitive peak tp = 1 µs; Tj(init) = 25 °C; square wave forward current tp = 100 µs; Tj(init) = 25 °C; square wave tp = 10 ms; Tj(init) = 25 °C; square wave IFRM repetitive peak forward tp ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)