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S60N10M

SI-TECH
Part Number S60N10M
Manufacturer SI-TECH
Description N-CHANNEL POWER MOSFET
Published Feb 13, 2020
Detailed Description SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggednes...
Datasheet PDF File S60N10M PDF File

S60N10M
S60N10M

Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S60N10M N-Channel MOSFET Features  60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V  High Ruggedness  Fast Switching  100% Avalanche Tested  Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS PD TJ TSTG Parameter Drain-Source Voltage(TC=25 ℃) ...


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