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FDS6930A

ON Semiconductor
Part Number FDS6930A
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Mar 10, 2020
Detailed Description FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description These N-Channel Logic Level MOSFETs are ...
Datasheet PDF File FDS6930A PDF File

FDS6930A
FDS6930A

Overview
FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features 5.
5 A, 30 V.
RDS(ON) = 0.
040 Ω @ VGS = 10 V RDS(ON) = 0.
055 Ω @ VGS = 4.
5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 D2 D2 D1 D1 F6D9S30A SO-8 G2 S2 pin 1 G1 S1 SO-8 SOT-223 5 6 7 8 SOIC-16 4 3 2 1 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed (Note 1a) PD Power Dissipation for Dual Operation (Note 1) Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJC Thermal Resistance, Junction-to-Case (Note 1) © 1998 Semiconductor Components Industries, LLC.
October-2017, Rev.
4 FDS6930A 30 ±20 5.
5 20 2 1.
6 1 0.
9 -55 to 150 78 40 Units V V A W W °C °C/W °C/W Publication Order Number: FDS6930A/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS Min Typ Max Units BVDSS ∆BVDSS/∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current IGSSF Gate - Body Leakage, Forward IGSSR Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) VGS = 0 V, I D = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V TJ = 55°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 V 20 mV/oC 1...


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