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BDY48

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching re...

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BDY48 PDF File

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