NPN Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60...
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