PNP Transistor
Description
isc Silicon PNP Darlington Power Transistor
MJ901
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -3A ·Low Collector Saturation Voltage-
: VCE (sat)= -2.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for power ...
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