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2SC4881

NPN Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4881 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ...

INCHANGE

2SC4881 PDF File

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