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2SC5517

INCHANGE

NPN Transistor


Description
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RA...



INCHANGE

2SC5517

PDF File 2SC5517 PDF File


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